Name: 2N2222A NPN Transistor - Sytronics
SKU: 161
Price: 7.96 ZAR
Availability: InStock

Description

Description

The 2N2222A NPN Transistor is a popular NPN bipolar junction transistor (BJT) commonly used in switching and amplification applications.

Parameter	Value	Unit	Description
Transistor Type	NPN	–	Type of BJT
Collector-Emitter Voltage (V<sub>CEO</sub>)	40	Volts	Maximum voltage between collector and emitter
Collector-Base Voltage (V<sub>CBO</sub>)	75	Volts	Maximum voltage between collector and base
Emitter-Base Voltage (V<sub>EBO</sub>)	6	Volts	Maximum voltage between emitter and base
Collector Current (I<sub>C</sub>)	600	mA	Maximum continuous collector current
Power Dissipation (P<sub>D</sub>)	625	mW	Maximum power dissipation
DC Current Gain (h<sub>FE</sub>)	100 to 300	–	Gain range depending on collector current
Transition Frequency (f<sub>T</sub>)	300 (min)	MHz	Frequency at which gain drops to 1
Collector-Emitter Saturation Voltage (V<sub>CE(sat)</sub>)	0.3	Volts	Voltage drop across the transistor when fully saturated
Base-Emitter Saturation Voltage (V<sub>BE(sat)</sub>)	1.2	Volts	Base-emitter voltage when the transistor is fully on
Package Type	TO-18, TO-92	–	Available package types
Junction Temperature (T<sub>j</sub>)	-55 to -+150	°C	Operating junction temperature range
Thermal Resistance, Junction to Ambient (R<sub>θJA</sub>)	200 (TO-92 package)	°C/W	Thermal resistance of the junction to the ambient air

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